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| 2. 70 3. 70 0 . 5 5 1 . 0 5 1 . 6 B5818W schottky barrier diode features power dissipation p d : 450 mw (tamb=25 ) collector current i f : 1 a collector-base voltage v r : 30 v operating and storage junction temperature range t j , t stg : -55 to +150 marking: sk electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 1ma 30 v reverse voltage leakage current i r v r =20v 1 ma forward voltage v f i f =1a i f =3a 0.55 0.875 v diode capacitance c d v r =4v, f=1mhz 110 pf unit: mm sod-123
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